Abstract
Features of liquid phase epitaxy of GaSb/InAs heterostructures are considered. A modified method of pulse cooling of saturated solution-melt is offered. This method allows us to avoid InAs substrate dissolution during contact with a Ga–Sb liquid phase. Also it is shown that forming InxGa1−xAsySb1−y solid solutions due to GaSb epitaxial layer dissolution by InAs substrate is energetically unfavourable.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
