Abstract

Planar structures of metallic copper are synthesized in porous glass (PG) plates by reduction of two-dimensional layers of copper (II) oxide by molecular hydrogen. The stability and electrical conductivity of the formed copper ensemble, close to the monolayer, are achieved when it fills the surface of the PG and is determined by the content and reduction temperature of the oxide precursor. The content of experimentally obtained copper oxide in porous glass is determined by its resistance to oxidation in air. A manifestation of the characteristic planar state of copper in porous glass is a slight slope of the dependences R(T–1). Te obtained values of the thermal coefficient of resistivity are in the range of 0.0005÷0.0008 degrees–1, which corresponds to values smaller than ones for bulk copper (0.004 degrees–1). Therefore, the formation of dielectric gaps resulting from the incomplete oxidation process for the twodimensional copper layer leads to an increase in the resistance while maintaining the adjacent sections, which in this case determine the nature of the conductivity, similar to metals. The occurrence of emission from the surface of Cu/PG systems is observed at values of the electric field strength less than 2 V/μm, decreasing in a narrow range when the copper content exceeds the conditional monolayer.The work was carried out within the framework of the state task with the financial support of the Ministry of Education of the Russian Federation (project No. FSZN-2020-0026).

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