Observations on the early stages of oxidation of titanium carbide

Abstract

Thin sections of a TiC single crystal having the {100} orientation were oxidized at 900 °C in four different partial pressures of oxygen, and the oxidation products were examined using transmission electron microscopy. At a higher partial pressure of oxygen, complete oxidation of TiC to TiO2 was observed; whereas at lower partial pressures, epitaxial oxides were formed. These epitaxial regions were characterized, and the epitaxial growth relationships of these oxides with respect to the TiC matrix were established.