Observation on photoluminescence evolution in 300 keV self-ion implanted and annealed silicon

Abstract

We report photoluminescence (PL) in self-ion implanted silicon wafers annealed from room temperature to 950°C. The annealing temperature (AT) has been demonstrated to be a key factor that induces the dominant PL structures to change from broadband, W line, S bands, R line, to D bands with its increase. The optimal annealed temperature ranges for these features are obtained. At low ATs (⩽650°C), the PL spectra were predominated by several sharp peaks, which originate from point defects at low recorded temperatures, and by broadband, which originates from cluster defects at high recorded temperature. At higher AT (>650°C), the PL spectra were only dominated by D1 band, which undergoes redshift and widening with increasing recorded temperature.