Abstract
The authors perform pump-probe ARPES measurement on a SnTe (111) surface to reveal the position of the Dirac point, and the Rashba splitting of the bulk valence band.
Highlights
A topological crystalline insulator (TCI) has been introduced as a new class of insulators [1]
We have performed time-resolved ARPES (TARPES) measurement on the (111) surface of a SnTe thin film grown by molecular beam epitaxy (MBE)
We observed the whole structure of the surface band, having the Dirac point below the top of the bulk valence band (VB)
Summary
A topological crystalline insulator (TCI) has been introduced as a new class of insulators [1]. As a result of the nontrivial topology, massless spin-polarized modes emerge on the surfaces of TCI. SnTe has attracted much attention in its ferroelectric properties, because the nonpolar (centrosymmetric) rocksalt (RS) structure of the IV-VI compounds is inherently soft, or vulnerable to change into a polar (noncentrosymmetric) rhombohedral structure [5]: In the SnTe case, the structural transition was reported in bulk crystals below ∼100 K depending on the hole concentration [6,7].
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