Abstract
CdSe/${\mathrm{Zn}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Mn}}_{\mathit{x}}$Te superlattices are characterized by type-II band alignment. We have used these structures to demonstrate that type-II superlattices can exhibit type-I excitons, i.e., excitons which are confined in the same semiconductor layer (either in CdSe or in ${\mathrm{Zn}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Mn}}_{\mathit{x}}$Te in the present example). Such spatially direct excitons form in a type-II structure when one of the carriers (electron or hole) originates from a well, while the other (hole or electron) originates from a state localized in the barrier, which is typical for subbands at above-barrier energies.
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