Abstract

Photoluminescence excitation experiments have been performed with a non-intentionally doped GaInAs/AlGaInAs superlattice lattice-matched to an InP substrate. The superlattice is the intrinsic part of a p-i-n diode. We have observed the 1s and 2s heavy-hole exciton states and the Wannier-Stark ladder associated to the light-hole exciton. Three other lines in our spectrum are related to the Wannier-Stark ladder associated to the first excited state of the heavy hole. These transitions are weakly allowed from the built-in voltage existing in the superlattice. Calculations based on Airy functions quantitatively support our interpretation.

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