Abstract
It has been found on a sample of the GaAs/AlGaAs heterostructure with the two-dimensional electron system that different configurations of domains of a spontaneous electric field are possible within one microwave- induced state with the resistance tending to zero. Transitions between such configurations are observed at the variation of the radiation power and magnetic field. In the general case, the configuration of domains is more complicated than existing models. The fragment of the distribution of the electric field in the sample for one of the observed configurations is in agreement with the rhombic domain structure considered by I. G. Finkler and B. I. Halperin, Phys. Rev. B 79, 085315 (2009).
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