Abstract
The resonant inverse photoemission study (RIPES) of ${\mathrm{CePd}}_{7}$ , has been carried out at the Ce 4d\ensuremath{\rightarrow}4f absorption edge. The strong resonant enhancement of the 4f cross section enables us to distinguish two 4f components in the empty electronic state near the Fermi level. The incidence-angle dependence of the RIPES indicates a clear difference between ground-state configurations at the bulk and surface. It is found that the former shows a strongly hybridized 4f state, while the latter shows a localized 4f character. The angle dependence of the RIPES of \ensuremath{\alpha}-Ce metal has been also carried out and similar results as those of ${\mathrm{CePd}}_{7}$ were obtained. The RIPES at the Ce 4d\ensuremath{\rightarrow}4f edge is found to be a powerful method to investigate the surface 4f state.
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