Abstract
The temperature-dependent characteristics of anInP/InGaAs superlattice-emitter resonant-tunnelling bipolartransistor have been studied and demonstrated. Due to the useof a five-period InP/InGaAs superlattice, the RT effect isobserved at cryogenic temperature. In addition, the temperature-dependent dccharacteristics of the studied device from room temperature to 398 K arereported. Dc current gain remains at an approximately constant value overthe measured temperature range. The temperature coefficients ofbase-emitter and base-collector turn-on voltages are -2and -3 mV K-1, respectively. The ideality factors of base current(nB) and collector current (nC) exhibitnegative temperature coefficients. nB≈1indicates that the bulk base recombination current componentdominates the whole base current as the temperature isincreased.
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