Abstract
Photo-Hall free electron concentrations were measured on MBE-grown silicon planar-doped GaAs samples, for silicon nominal concentration in the range of (1.4 to 88)×10 12 cm -2. We found both positive and negative persistent photoconductivities (PPPC and NPPC), which were discussed based on the growth parameters. Time resolved PPC measurements show some evidence that the positive and negative PPC effects are related to different physical processes. The PPPC effect seems to be related to the spatial charge separation and to the EL2 center and the NPPC effect to the DX center.
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