Observation of the Middle-Infrared Emission from Semiconductor Lasers Generating Two Frequency Lines in the Near-Infrared Region of the Spectrum

Abstract

Simultaneous generation of several frequency bands of stimulated emission in a semiconductor laser with three quantum wells is experimentally studied. It is shown that different frequencies can be generated both in the fundamental and excited transverse modes of the waveguide. It is found that the simultaneous generation of stimulated emission in two-and three-frequency bands is possible. Dependences of the lasing power in different bands on the current are studied. A broadband Si:B extrinsic photodetector is used to detect the radiation in the middle-infrared spectral region in the emission from the semiconductor laser that generates two emission bands with an energy difference between the peaks of 50 meV (the wavelength λ ≈ 25 μm). It is assumed that the middle-infrared emission is related to the generation of the difference harmonic.