Abstract
From the analysis of rod-shaped diffuse x-ray scattering from a Si wafer it has been suggested that platelike defects are induced by the wafer making process. It was found, however, from the cross-sectional observation of a mechanochemically polished Si wafer surface by a high-resolution transmission electron microscopy that such defects do not exist under the surface. On the basis of this fact and an additional x-ray measurement from the (001) surface of Si wafer the rod-shaped diffuse x-ray scattering is reinterpreted as scattering due to the truncation of the charge density at the crystal surface.
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