Abstract
Tunnel current measurements between strongly disordered two-dimensional electron systems in a perpendicular magnetic field are presented. Two-dimensional electron accumulation layers are formed by an extremely narrow layer of Si donors (Si delta doping) in GaAs on either side of an AlGaAs tunnel barrier. Strong interaction between Landau levels of the two-dimensional subbands in each accumulation layer is observed as an anticrossing of the related peak positions in the tunnel current vs. voltage curves as a function of magnetic field. The splitting of the interacting Landau levels is about 10 meV, which cannot be explained by nonparabolicity of the conduction band in GaAs. A possible reason for the observed interaction connected with the collective excitations in the 2DES is discussed.
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