Observation of the influence of complex SiC porous buffer layer on properties of GaN/Si(111) heterostructures

Abstract

1-μm-thick GaN layers were obtained in one growth procedure on compliant SiC/Si(111) substrates using plasma-assisted molecular beam epitaxy (PA MBE). Si(111) substrates were modified by the atoms substitution technique. Prior to the atoms substitution procedure, on the one substrate, the transition porous Si layer (por-Si) was performed. The GaN layer grown on this substrate revealed better surface morphology and structural quality, less threading dislocation density, and as a result, showed lower free carrier concentration and higher carrier mobility. Moreover, the XRD study revealed less strain level in the GaN layer grown on the por-Si layer.