Abstract
The high-resolution M\"ossbauer effect of the 13.3-keV transition $\ensuremath{\tau}=4.3$\ensuremath{\mu}sec) in $^{73}\mathrm{Ge}$ has been observed in transmission experiments at room temperature. The recoilless $\ensuremath{\gamma}$-ray source was carrier-free $^{73}\mathrm{As}$ diffused into a single crystal of elemental germanium; the absorber was a thin single-crystal layer of enriched $^{73}\mathrm{Ge}$ epitaxially grown on a silicon substrate. The resonance absorption line, recorded with an electromechanical velocity spectrometer, has a corrected depth of \ensuremath{\sim} 2.0%, and a (full width at half-maximum) linewidth $2\ensuremath{\Gamma}$ of 47(7) \ensuremath{\mu}m/sec, which is \ensuremath{\sim} 7 times the natural linewidth. Despite the broadening this is the narrowest M\"ossbauer resonance observed so far at room temperature.
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