Observation of the early stages of GaN thermal decomposition at 1200 °C under N2

Abstract

We investigated the partial decomposition of GaN layers grown in an atmospheric pressure metal organic vapor phase epitaxy (AP-MOVPE) vertical reactor at 1200 °C under N2 ambient. In these conditions, the early stages of GaN thermal decomposition were studied. The GaN decomposition was monitored by in-situ laser reflectometry (LR). The properties of the as grown and decomposed GaN samples were analyzed by scanning electron microscope (SEM). We show that GaN decomposition starts by the formation of GaN nano-grains at the early stages. Then, due to the anisotropy of the decomposition, the GaN nano-grains are more easily etched than the GaN (00.2) surface. The lateral etching may results in local smooth GaN surface formation. After that the depth etching starts again on the etched pits. Room temperature cathodoluminescence (CL) study revealed better optical properties of the GaN grains when compared to the whole GaN surface.