Abstract

The experiment on the scattered electrons in a GaAlAs/GaAs three-terminal heterostructure discloses an electron tunneling and scattering nature in a resonant tunneling regime. The experimental result shows little electron scattering up to the resonant peak voltage. The abrupt increase of the scattered electron current which onsets at a resonant peak voltage, indicates the breakdown of the coherency of electron tunneling in the resonant tunneling regime.

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