Abstract
Ultra‐thin HfO2 films of 3.5, 5.0, and 8.0 nm nominal thicknesses were prepared, respectively, on silicon substrates by using atomic layer deposition method. Through the analyses of X‐ray reflectometry (XRR), X‐ray photoelectron spectroscopy, and transmission electron microscopy for HfO2 films with and without sample cleaning, the effects of surface contamination on XRR curve and film thickness were investigated, and contamination layer was observed and the thickness of the layer was determined. X‐ray photoelectron spectroscopy results indicated that the amount of surface contamination varied considerably because of the surface cleaning. XRR curve shapes and the positions of thickness fringes changed and the thickness from Fourier analyses of the curves were different for the same sample due to the different surface contamination. Contamination layer of about 1 nm thickness was observed by Fourier analysis of XRR curve. Simulation for XRR curve showed the best fit to data when contamination layer of about 1 nm thickness was considered, and the result was consistent with that of the Fourier analysis. Copyright © 2016 John Wiley & Sons, Ltd.
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