Abstract
The SnTe–GeTe solid solutions doped with In belong to a new class of superconducting (SC) materials — semiconducting compounds with a resonant impurity states on the background of the valence band spectrum. We studied the SC and structural phase transitions (SPT) in the (Sn 1− z Ge z ) 1− x In x Te compounds. Our experimental results include the data on the temperature dependencies of the lattice parameters, magnetization, Hall effect, and electrical resistivity for (Sn 0.8Ge 0.2) 1− x In x Te in the wide temperature range (0.4–400 K). The SPT from cubic to rhombohedral structure was determined by X-ray measurements. The dependence of SC parameters of (Sn 1− z Ge z ) 1− x In x Te on Ge content ( z=0/0.4 with the step of z equal 0.05) were obtained for two In concentrations ( x=0.05, 0.16).
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