Abstract
The structure of metal-semiconductor Schottky contacts (Au:GaAs, Al:GaAs, and TiSi/sub 2/:GaAs) was investigated by high-resolution and analytical electron microscopy. In all cases investigated, a change in stoichiometry (increase of the As/Ga ratio) in the GaAs beneath the metal contact was observed. This indicates the formation of anion-rich defects at Schottky contacts on GaAs, giving strong support for the defect models of Fermi level pinning.
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