Observation of stimulated emission, line narrowing, and red shift of emission peak from optically-pumped rectangular cross-sectional GaN optical waveguides fabricated by selective growth

Abstract

The authors examined low-loss III-V nitride optical waveguides for fabrication on sapphire substrates for active devices using a selective-area growth technique. A rectangular cross-section waveguide can be created by adjusting crystal growth conditions. A stimulated emission peak at 362 nm, line narrowing, and a red shift were observed from the selectively grown GaN waveguides by optical pumping.