Abstract
We fabricated a Ta/Gd-Fe/Ta and a Ta/Gd-Fe/Ir22Mn78/Co90Fe10/Ta multilayered magnetic wire and investigated spin–orbit torque current-induced magnetization switching in these wires. Magnetization switching in the Ta/Gd-Fe/Ir22Mn78/Co90Fe10/Ta multilayered magnetic wire can be observed by an electric current even if the external in-plane magnetic field is not applied at all. Moreover, we successfully observed the periodical magnetization switching in the Ta/Gd-Fe/Ir22Mn78/Co90Fe10/Ta multilayered magnetic wire in zero magnetic field. This indicates that the present wire is a promising material to realize magnetic random access memory with low power consumption.
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