Abstract
The observation of single interface traps in small area MOSFET's by charge pumping is demonstrated for the first time, The dependence of the single trap charge pumping current on the base level voltage is described, Also the creation of one single interface trap under influence of low level hot carrier injection is demonstrated. A prediction of the charge pumping current behavior as a function of rise and fall time and temperature for the case of individual traps is made. The correlation with RTS-noise experiments is discussed.
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