Abstract
A stepped Si(111) surface consisted of atomically flat terraces and step bands where atomic steps bunched was prepared by direct-current heating in UHV. An electron-emission spectrum, generated with a field-emission-type electron gun, was observed in situ with a scanning Auger microscope (SAM). The electron-emission spectrum obtained in the direct mode included only characteristic Auger electron (AE) peaks of silicon and a secondary-electron (SE) peak. The AE/SE spectrum obtained from the atomically flat Si(111) terrace between the steps was different from the spectra from sputtered clean silicon (111) and (100) surfaces as to the background shape and the relative intensities of the characteristic peaks. We also found that the stepped surface morphology could be imaged by using only the energy-analyzed SEs when the intensity was defined as the difference between the peak height and the background intensity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
