Observation of resonant tunneling through a self-assembled InAs quantum dot layer

Abstract

We report on the study of resonant tunneling through a self-assembled InAs quantum dot (QD) layer using the following design: The QD layer surrounded by undoped GaAs barriers is clad by two GaInNAs∕GaAs short-period superlattice regions which serve as injector and collector of electrons. A clear observation of three- to zero-dimensional resonant tunneling is presented in electrophotoluminescence measurement results and supported with current-voltage and capacitance-voltage characteristics.