Abstract
Graphene nanoribbon (GNR) is designed for demonstrating electronic properties is made by cutting narrow strip of monolayer graphene is a centre of all materials in nano science based research work. Armchair GNR (A-GNR) which is now used because it shows semiconducting properties than its other behavior. Bandgap energy, velocity of carrier, density of state (DOS) which are the basic features in observing semiconducting properties of materials. Another important feature which is silently discussed in literature is that “reservoir” is a source of charge carrier into nano scale channel has a larger amount of DOS than in A-GNR. In this paper we will observe the bandgap energy, velocity of carrier in A-GNR and DOS in AGNR and reservoir assuming reservoir length in nanometer scale. We will also calculate above mentioned parameter for m=3p+1 and m=3p structures. Keywords—Graphene nanoribbon, bandgap energy, velocity density of state,reservoir.
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