Abstract
A single-ion hit system combined with the JAERI heavy ion microbeam system can be applied to observe individual phenomena induced by interactions between high-energy ions and a semiconductor device using a technique to measure the pulse height of transient current (TC) signals. The reduction of the TC pulse height for a Si PIN photodiode was measured under irradiation of 15 MeV Ni ions onto various micron-sized areas in the diode. The data containing damage effect by these irradiations were analyzed with least-square fitting using a Weibull distribution function. Changes of the scale and the shape parameters as functions of the width of irradiation areas brought us an assumption that a charge collection in a diode has a micron level lateral extent larger than a spatial resolution of the microbeam at 1 μm. Numerical simulations for these measurements were made with a simplified two-dimensional model based on this assumption using a Monte Carlo method. Calculated data reproducing the pulse-height reductions by single-ion irradiations were analyzed using the same function as that for the measurement. The result of this analysis, which shows the same tendency in change of parameters as that by measurements, seems to support our assumption.
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