Observation of Positive Trap Charge by Electron Holography in PMOS Device

Abstract

Abstract It has been hypothesized that trap charge plays an important role in PMOS (positive-channel metal oxide semiconductor) device reliability. By using electron holography, trap charge in a spacer oxide was observed to cause an inversion of junction in an un-stressed PMOS device prepared using a Ga+ focused ion beam (FIB). Through 400°C annealing for 10 min in vacuum, trap charge in the spacer oxide dispersed and the junction recovered. Technology computer-aided design (TCAD) simulation was used to confirm the positive trap charge effect on the junction. Furthermore, the simulation showed that a low concentration of positive trap charge at the Si/SiO2 interface under the spacer led to a higher tunneling current due to an abrupt junction near the Si surface through a very localized junction inversion.