Observation of picosecond electron spin relaxation in InGaAsP by time‐resolved spin‐dependent pump and probe reflection measurement

Abstract

We have investigated the electron spin relaxation in undoped InGaAsP grown on an InP substrate. Time‐resolved spin‐dependent pump and probe reflection measurements revealed a spin relaxation behavior between 10 and 300 K. We have observed the electron spin relaxation times of 980 ps at 10 K and 95 ps at room temperature. The observed presence of the carrier density dependence and the weak temperature dependence of spin relaxation time imply that the Bir–Aronov–Pikus (BAP) process is effective at 10–30 K. At 100–300 K, the observed presence of the temperature dependence and the absence of the carrier density dependence of spin relaxation time indicate that the D'yakonov–Perel' (DP) and Elliott–Yafet (EY) processes are effective.