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Abstract
Photoluminescence (PL) measurements are presented for surface quantum wells consisting of ultra-thin layers of InAs deposited on InP by molecular beam epitaxy. The variation of PL peak energy and intensity, with well width and temperature, clearly indicate that radiative recombination occurs within the InAs layers. Moreover, decreases in the PL emission intensities, coupled with the emergence of higher energy PL components, reflect the oxidation of the InAs surface with time.
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