Abstract
In this paper, We study the Zeeman spin-splitting in hole quantum wires oriented along the [011] and crystallographic axes of a high mobility undoped (100)-oriented AlGaAs/GaAs heterostructure. Our data show that the spin-splitting can be switched ‘on’ (finite g*) or ‘off’ (zero g*) by rotating the field from a parallel to a perpendicular orientation with respect to the wire, and the properties of the wire are identical for the two orientations with respect to the crystallographic axes. We also find that the g-factor in the parallel orientation decreases as the wire is narrowed. This is in contrast to electron quantum wires, where the g-factor is enhanced by exchange effects as the wire is narrowed. This is evidence for a k-dependent Zeeman splitting that arises from the spin- nature of holes.
Highlights
The use of spin instead of charge to carry information is a central goal in the fields of spintronics and quantum information, generating significant interest in routes to efficient spin manipulation in semiconductor devices[1,2]
Have used this approach to fabricate 1D hole systems with highly stable gate characteristics and clear conductance quantization[20], and recently extended it to study the Zeeman spin-splitting anisotropy in 1D hole systems in (311)-oriented heterostructures[17]. We extend this semiconductor-insulatorsemiconductor field-effect transistor (SISFET)-based approach to study the Zeeman spin-splitting in hole quantum wires oriented along the [011] and [011] directions of a (100)-oriented heterostructure
We study the spin properties of the hole quantum wires by measuring the Zeeman spin-splitting for different orientations of the wire and magnetic field with respect to the crystallographic axes
Summary
The use of spin instead of charge to carry information is a central goal in the fields of spintronics and quantum information, generating significant interest in routes to efficient spin manipulation in semiconductor devices[1,2]. Low dimensional hole systems in p-type AlGaAs/GaAs heterostructures hold considerable potential because the much stronger spin-orbit coupling in holes[3] may lead to devices where spin can be manipulated electrostatically[4,5]. The strong spin-orbit coupling presents some important fundamental physics questions, including how the peculiar spin-3/2 nature of holes[6] is manifested in the experimentally observable properties of lowdimensional GaAs hole devices[7,8,9,10,11,12,13,14,15,16,17]
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