Abstract
A new strain relief mechanism was observed in lattice mismatched epitaxial layers grown on (11¯1) surfaces. Thin films of Si0.85Ge0.15 were epitaxilly grown by rapid thermal chemical vapor deposition on patterned (001) and planar (11¯1) Si substrates. The (001) Si substrates were lithographically patterned and anisotropically etched to produce a line pattern of V-shaped grooves running in the [11¯0] direction where the walls of the grooves were the {111} crystal planes. Cross-section and plan-view transmission electron microscopy studies revealed the presence of open-ended stacking fault tetrahedra in Si0.85Ge0.15 grown both on (11¯1) Si wafers and the {111} side walls of the patterned (001) Si wafers. No defects were observed in the (001) portions of the films grown on nonplanar substrates.
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