Observation of one-electron charge in an enhancement-mode InAs single-electron transistor at 4.2K

Abstract

We demonstrate experimentally single-electron quantum dots using a single-top-gate transistor configuration on a composite quantum well. The data indicate a 15meV Coulomb charging energy and a 20meV orbital energy spacing, which imply a quantum dot of 20nm in diameter. Combining with the inherent advantage of a large electron g* factor in InAs, our demonstration is significant for a solid state implementation of a scalable quantum computing.