Abstract
Fractional monolayer studies of Ge on GaAs(110) were performed with angle-resolved photoemission at the Wisconsin Synchrotron Radiation Center. Normal emission data for 14 < hν <27 eV were analyzed. The most significant effects of the Ge adatoms are shifts in photoemission peaks known to be due to GaAs interband transitions. The shifts, which are nonuniform, are due to specific nonuniform shifts in interband transitions. Valence band (VB) shifts relative to the VB maximum can be determined from some of the transitions. The top VB shifts downward and the next deeper VB shifts upward in the neighborhood of one-third the distance from Γ to X on the Σ line (0.57 Å −1). We suggest the shifts are the result of chemisorption-induced charge transfers whose resonance-like states decay over several atomic layers below the surface.
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