Abstract
Polarized Raman spectra are investigated in GeSe and SnSe at low temperatures. New Raman lines which can not be expected by a group theoretical analysis for the known crystal structure of the orthorhombic D 16 2 h have been observed typically in the ( a, a) and ( b, b) polarization configurations. With decreasing temperature, three lines in GeSe grow weakly at 89,201 and strongly at 226 cm -1 below 150 K, accompanied by enhancement of layer breathing mode (175 cm -1 at 273 K) intensity. One line in SnSe grows weakly at 193 cm -1 below 50 K. The appearance of the new Raman lines as well as a resistivity anomaly suggests a novel structural phase transition in this system.
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