Abstract
N-shaped negative differential resistance (NDR) with high peak-to-valley ratio (PVR) and low onset voltage ( V NDR) are clearly observed in a 50-nm gate ridge-type InGaAs/InAlAs quantum wire field-effect transistor (QWR-FET). The NDR of low onset voltage ( V NDR) and its dependence on the gate voltage are attributed to the real space transfer of channel carriers into a barrier layer underneath the gate by field-assisted tunneling. The NDR characteristic of the QWR-FET is enhanced compared with that of InGaAs/InAlAs quantum well field-effect transistor (QW-FET). The narrower channel width and shorter gate length effectively improve the PVR and V NDR.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
