Abstract
Mid-infrared (4.20–4.84 μm) intersubband absorption in non-polar m-plane Al0.5Ga0.5N/GaN multiple-quantum wells is observed at room temperature. 10 period Al0.5Ga0.5N/GaN multiple-quantum wells were grown on free-standing m-plane GaN substrates by metalorganic chemical vapor deposition (MOCVD), and the high-quality structural and optical properties are revealed by x-ray diffraction and photoluminescence studies. Through this we have demonstrated that MOCVD grown non-polar m-plane AlGaN/GaN quantum wells are a promising material for mid-infrared intersubband devices.
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