Abstract
Abstract The results of electrical transport measurements (Hall effect and resistivity) performed on In.65Ga.35As-In Al.48 As modulation doped heterostructure (with Si-doped InAlAs donor layer) and on In .52Al .48As thick layer are presented as a function of temperature (77–300K range) and hydrostatic pressure (up to 1300 MPa). At low temperature, the persistent photoconductivity (PPC) and metastable donor states occupation effects were observed. Due to the pressure induced decrease of the two-dimensional electron gas concentration the pronounced increase in the amplitude of observed effects was obtained. The above results are discussed in terms of DX-like centers and/or interface/surface states in the QW structure.
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