Abstract
We study the quantum oscillations in the BiSbTe3 topological insulator. In addition to the Shubnikov-de Haas (SdH) oscillation, the Aharonov-Bohm-like (ABL) oscillations are also observed. The ABL oscillation period is constant at each Landau level (LL) which is determined from the SdH oscillation. The shorter ABL oscillation periods are observed at lower LLs. The oscillation period is proportional to the square root of the LL at temperatures. The ratio of the ABL oscillation period to the effective mass is weak LL dependence. The LL-dependent ABL oscillation might originate from the LL-dependent effective mass.
Highlights
Aharonov-Bohm (AB) interference originates from the carrier wavefunction interference in a loop which might be patterned ring [1, 2], material geometric structure [3–6, 8–11], or carrier transport trajectory [12]
The R(14T)/R(0T) reaches 10 and is higher than most reported values in BixSb2−xTeySe3−y topological insulators [17–23, 23–33]. Both theoretical and experimental investigations support that the MR ratio is proportional to the carrier mobility [34], The measured high MR ratio supports the high quality of our BiSbTe3 sample
The top-left inset reveals the dR/dB as a function of 1/B. It reveals that periodic oscillations and oscillation peaks and dips are at the same B at 2 and 8 K. This is known as Shubnikov-de Haas (SdH) oscillation that originates from a two-dimensional system
Summary
Aharonov-Bohm (AB) interference originates from the carrier wavefunction interference in a loop which might be patterned ring [1, 2], material geometric structure [3–6, 8–11], or carrier transport trajectory [12]. The magnetic field, B, through the loop will induce carrier wavefunction phase shift that leads to periodic wavefunction interference oscillations. This oscillation period is sensitive to the carrier transport characteristics, such as carrier coherence length and mobility [3, 12]. The quantum interference is an excellent tool to detect material transport characteristics and understand intrinsic mechanisms. Due to the short carrier coherence length and the small flux quantum, the quantum interference is mainly reported at high mobility nanowires or patterned nano-rings at low B [3–6, 8–11].
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