Observation of internal multiplication of nonequilibrium charge in irradiated silicon detectors at a temperature of 1.9K

Abstract

The development of modern high-energy physics is a powerful incentive for the progress of its experimental base. The use of semiconductor devices is standard for large accelerators and experimental setups at LHC, CERN, and perspective as sensors for monitoring beam loss and radiation fields in superconducting magnets and accelerating resonators operating at superfluid helium temperature (1.9 K). In these problems, the optimal type of radiation sensor is a compact silicon detector, the use of which in harsh radiation environment in combination with helium temperatures is a non-trivial task. The most important characteristics of such devices are the distribution of the electric field in the volume and the parameters of charge carrier transport, which determines the detector signal. The study considers specific kinetics of charge collection in silicon detectors at a temperature of 1.9 K in situ irradiated by relativistic hadrons.