Observation of intermediate template directed SiC nanowire growth in Si–C–N systems

Abstract

SiC nanowires (NWs) are commonly prepared in a Si–C–N system, but its formation mechanism is not fully understood. High resolution transmission electron microscopy and electron energy loss spectroscopy observation recorded the growth process of how Si3N4 NWs were transformed into SiC NWs, and demonstrated the validity of an intermediate template directed SiC NW growth via carbothermal reduction of intermediate Si3N4 NWs in a Si–C–N system. Based on this discovery, an intermediate-template growth mechanism of SiC NWs was proposed.