Abstract
The growth behavior during silicon molecular beam epitaxy on Si(lll) is observed by measuring the intensity oscillation of reflection high energy electron diffraction. The oscillation behaves as what is expected with bilayer model. The characteristics of damping and recovery of intensity oscillation during Si molecular beam epitaxy growth on Si(lll) are different from those on Si(100), but are very similar to those during GaAs molecular beam epitaxy growth.
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