Abstract
The surface structure of indium overlayers on cleaved p-type GaAs(110) is studied by scanning tunneling microscopy in ultrahigh vacuum. About 1 monolayer of indium was deposited on the surfaces at room temperature. We observed two types of indium adsorption. One is linear clusters along the [1 1 0] direction with corrugation amplitudes 1–2 Å above the GaAs surface. The other type, in which the second-layer indium atoms adsorb on the four-fold hollow site of the first-layer indium atoms, is also obtained near the linear islands. It is found that an In atom favors a Ga site rather than an As site for both types of adsorption.
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