Abstract
In-plane asymmetric strain relaxation in lattice-mismatched InGaAs/GaAs(001) heteroepitaxy is studied by in situ three-dimensional X-ray reciprocal space mapping. Repeating crystal growth and growth interruptions during measurements allows us to investigate whether the strain relaxation is limited at a certain thickness or saturated. We find that the degree of relaxation during growth interruption depends on both the film thickness and the in-plane directions. Significant lattice relaxation is observed in rapid relaxation regimes during interruption. This is a clear indication that relaxation is kinetically limited. In addition, relaxation along the [110] direction can saturate more readily than that along the [1̄10] direction. We discuss this result in terms of the interaction between orthogonally aligned dislocations.
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