Abstract
We investigated the influence of the oxygen plasma etching on the electron transport in thin graphite films. The semimetallic temperature dependence of zero-bias resistance was observed for samples microfabricated with both Al mask and resist mask, but the possible damage by e-beam irradiation was observed in films with Al mask. In thin graphite films microfabricated by O2 plasma with resist mask, the proximity-induced superconductivity was observed and the critical supercurrent and temperature strongly depend on the gate voltage.
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