Observation of gamma radiation-induced defects in radiation-intolerant and radiation-tolerant Si/SiO2 by electron spins resonance and quantitative interpretation

Abstract

The gamma radiation-induced defects in radiation intolerant and radiation tolerant Si/SiO2 were observed by electron spin resonance (ESR). The Pb and È defects appeared in radiation-intolerant Si/SiO2 after radiation, but only Pb defects appeared in radiation-tolerant Si/SiO2 before and after radiation. The experimental results showed that these defects were correlated with the way of oxidation, the dosage of 60Co radiation and the electrical bias field during radiation. The higher the radiation dosage, the higher the defect concentration. A quantitative relationship was found between defect concentration and radiation dosage. Besides, the △B (peak to peak) of Pb and È indicated that Pb is the defect with a slow electron spin relaxation time, while È is the defect with a fast electron spin relaxation time. Finally, the experimental results are explained qualitatively.