Abstract
The modulated reflectivity spectra of a surface quantum well, composed of vacuum- /GaAs/Al x Ga 1− x As, exhibit in a striking manner optical transitions associated with electronic states confined within the quantum well. The spectra reveal numerous distinct signatures of the transitions between quantum confined states in the GaAs surface layer, their energies demonstrably controlled by its width. Equally remarkable signatures appear, which can be traced to localized electronic levels above the Al x Ga 1− x As single quantum barrier formed by this structure.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
