Year-end Sale % OFF 
Abstract
The I–V and C-V data of Schottky devices formed on electrodeposited n-CdTe films are interpreted to determine the principle trap energy and density. The observed trap is an electron trap located at 0.55 eV below the conduction band with a density of ∼7 × 10 15/cm 3. This correlates well with the values reported for CdTe prepared by different methods. Nickel is found to be an injecting contact to electrodeposited CdTe films. Au/ n-CdTe barrier height is determined to be 0.75–0.85 eV for Schottky devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
