Observation of electron behavior in ambipolar polymer-based light-emitting transistor by optical second harmonic generation

Abstract

By using the optical second harmonic generation (SHG) measurement, we directly visualized the carrier behavior leading to carrier recombination and electroluminescence (EL) in ambipolar polymer-based organic light-emitting transistor (OLET) with an active layer of poly 9,9-di-n-octylfluorene-alt-benzothiadiszole (F8BT). Eliminating photoluminescence generated at 560 nm by a two-photon absorption process, the dynamical carrier motion in the F8BT-OLET was visualized by the electric field induced SHG induced at 420 nm. Diffusion-like electron transport that starts from the drain electrode was directly caught as the transits of the SHG images. Accordingly, EL was obtained at the edge of the source electrode. The electron mobility was estimated from the visualized carrier motion as 9.2×10-4cm2/Vs, which was larger than that obtained from the transfer curve of the OLET.